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      Simultaneous Imaging of Dopants and Free Charge Carriers by Monochromated EELS.

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          Abstract

          Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By analyzing high- and low-energy excitations in EELS, we reveal chemical and electronic inhomogeneities within a single BLSO nanocrystal. The inhomogeneous doping leads to distinctive localized infrared surface plasmons, including a previously unobserved plasmon mode that is highly confined between high- and low-doping regions. We further quantify the carrier density, effective mass, and dopant activation percentage by EELS and transport measurements on the bulk single crystals of BLSO. These results not only represent a practical approach for studying heterogeneities in solids and understanding structure-property relationships at the nanoscale, but also demonstrate the possibility of infrared plasmon tuning by leveraging nanoscale doping texture.

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          Author and article information

          Journal
          ACS Nano
          ACS nano
          American Chemical Society (ACS)
          1936-086X
          1936-0851
          Nov 22 2022
          : 16
          : 11
          Affiliations
          [1 ] Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey08854, United States.
          [2 ] ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860Castelldefels, Barcelona, Spain.
          [3 ] Central European Institute of Technology, Brno University of Technology, 61200Brno, Czech Republic.
          [4 ] Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey08854, United States.
          [5 ] ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010Barcelona, Spain.
          Article
          10.1021/acsnano.2c07540
          36317944
          fe712a87-8c02-4a40-b168-e5fc97770e03
          History

          band gap,carrier effective mass,doped semiconductor,high-mobility oxide,infrared plasmonics,inhomogeneity,monochromated electron energy-loss spectroscopy

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