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Reduction of morphological defects in 4H-SiC epitaxial layers
Author(s):
Y. Li
,
Z Zhao
,
L Yu
,
Y WANG
,
P Zhou
,
Y.X. Niu
,
Z.H. Li
,
Y.F. Chen
,
P Han
,
Y Li
,
Z.F. Zhao
,
P HAN
Publication date:
2019
Journal:
J. Cryst. Growth
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Model Reduction of Parametrized Systems 2015
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Journal
DOI::
10.1016/j.jcrysgro.2018.10.023
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