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      Defects in semiconductors after electron irradiation or in high-temperature thermal equilibrium, as studied by positron annihilation

      Author(s): , , , ,
      Publication date (Electronic):
      Journal: Journal of Physics: Condensed Matter
      Publisher: IOP Publishing

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          Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

          G. Watkins, J. W. Corbett (1965)
          Article 0 comments Cited 239 times – based on 0 reviews     Review now
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            Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K

            Yozo Tokumaru, Yasumasa Okada (1984)
            Article 0 comments Cited 170 times – based on 0 reviews     Review now
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              Diffusion Mechanisms and Point Defects in Silicon and Germanium

              A. Seeger, K. Chik (1968)
              Article 0 comments Cited 139 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Physics: Condensed Matter
                Abbreviated Title: J. Phys.: Condens. Matter
                Publisher: IOP Publishing
                ISSN (Print): 0953-8984
                ISSN (Electronic): 1361-648X
                Publication date Created: July 01 1989
                Publication date (Print): July 01 1989
                Publication date (Electronic): January 01 1999
                Volume: 1
                Issue: SA
                Pages: SA33-SA48
                Article
                DOI: 10.1088/0953-8984/1/SA/005
                SO-VID: 85740248-d763-4efb-ad39-0f5d000c7875
                Copyright © © 1999
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