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      Higher-order topological insulators

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          Abstract

          A new class of materials that are insulating in the bulk and on surfaces but have conducting hinge channels is studied.

          Abstract

          Three-dimensional topological (crystalline) insulators are materials with an insulating bulk but conducting surface states that are topologically protected by time-reversal (or spatial) symmetries. We extend the notion of three-dimensional topological insulators to systems that host no gapless surface states but exhibit topologically protected gapless hinge states. Their topological character is protected by spatiotemporal symmetries of which we present two cases: (i) Chiral higher-order topological insulators protected by the combination of time-reversal and a fourfold rotation symmetry. Their hinge states are chiral modes, and the bulk topology is Z 2 -classified. (ii) Helical higher-order topological insulators protected by time-reversal and mirror symmetries. Their hinge states come in Kramers pairs, and the bulk topology is Z -classified. We provide the topological invariants for both cases. Furthermore, we show that SnTe as well as surface-modified Bi 2TeI, BiSe, and BiTe are helical higher-order topological insulators and propose a realistic experimental setup to detect the hinge states.

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          Most cited references41

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          Generalized Gradient Approximation Made Simple.

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            Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

            We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the electronic state changes from a normal to an "inverted" type at a critical thickness \(d_c\). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss the methods for experimental detection of the QSH effect.
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              Topological Insulators in Three Dimensions

              (2007)
              We study three dimensional generalizations of the quantum spin Hall (QSH) effect. Unlike two dimensions, where the QSH effect is distinguished by a single \(Z_2\) topological invariant, in three dimensions there are 4 invariants distinguishing 16 "topological insulator" phases. There are two general classes: weak (WTI) and strong (STI) topological insulators. The WTI states are equivalent to layered 2D QSH states, but are fragile because disorder continuously connects them to band insulators. The STI states are robust and have surface states that realize the 2+1 dimensional parity anomaly without fermion doubling, giving rise to a novel "topological metal" surface phase. We introduce a tight binding model which realizes both the WTI and STI phases, and we discuss the relevance of this model to real three dimensional materials, including bismuth.
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                Author and article information

                Journal
                Sci Adv
                Sci Adv
                SciAdv
                advances
                Science Advances
                American Association for the Advancement of Science
                2375-2548
                June 2018
                01 June 2018
                : 4
                : 6
                : eaat0346
                Affiliations
                [1 ]Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland.
                [2 ]Donostia International Physics Center, P. Manuel de Lardizabal 4, 20018 Donostia–San Sebastian, Spain.
                [3 ]Department of Applied Physics II, Faculty of Science and Technology, University of the Basque Country Universidad del País Vasco, Apartado 644, 48080 Bilbao, Spain.
                [4 ]Department of Physics, Princeton University, Princeton, NJ 08544, USA.
                [5 ]Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany.
                [6 ]Laboratoire Pierre Aigrain, Ecole Normale Supérieure–Paris Sciences & Lettres Research University, CNRS, Université Pierre et Marie Curie–Sorbonne Universités, Université Paris Diderot–Sorbonne Paris Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France.
                Author notes
                [*]

                Present address: Ikerbasque, Basque Foundation for Science, 48013 Bilbao, Spain.

                []Corresponding author. Email: titus.neupert@ 123456uzh.ch (T.N.); bernevig@ 123456princeton.edu (B.A.B.)
                Author information
                http://orcid.org/0000-0001-8113-0998
                http://orcid.org/0000-0003-2169-8068
                http://orcid.org/0000-0003-4702-6139
                http://orcid.org/0000-0001-6337-4024
                Article
                aat0346
                10.1126/sciadv.aat0346
                5983919
                29869644
                263448ce-aa8a-45ef-9b09-619bb4422312
                Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

                This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.

                History
                : 17 January 2018
                : 18 April 2018
                Funding
                Funded by: doi http://dx.doi.org/10.13039/100000001, National Science Foundation;
                Award ID: DMR ? 1643312, ONR - N00014-14-1-0330, ARO MURI W911NF-12-1-0461, NSF-MRSEC DMR-1420541
                Funded by: doi http://dx.doi.org/10.13039/100000001, National Science Foundation;
                Award ID: PHY-1066293
                Funded by: doi http://dx.doi.org/10.13039/100000008, David and Lucile Packard Foundation;
                Funded by: doi http://dx.doi.org/10.13039/100000015, U.S. Department of Energy;
                Award ID: de-sc0016239
                Funded by: doi http://dx.doi.org/10.13039/100000893, Simons Foundation;
                Funded by: doi http://dx.doi.org/10.13039/501100001711, Swiss National Science Foundation;
                Award ID: 200021-169061
                Funded by: doi http://dx.doi.org/10.13039/501100003329, Ministerio de Economía y Competitividad;
                Award ID: FIS2016-75862-P
                Funded by: Schmidt Fund for Innovative Research;
                Categories
                Research Article
                Research Articles
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                Materials Science
                Materials Science
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                Jeanelle Ebreo

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