SILC decay in Ge-based MOS devices with La&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; gate dielectrics subjected to constant voltage stress

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Conference

Publisher: IEEE

Publication date: September 2009

Publication date (Print): September 2009

Pages: 253-256

Article

DOI: 10.1109/ESSDERC.2009.5331319

SO-VID: f9e663bd-9626-490b-a6c9-0b39e848b4f9

Conference name: 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC)

Conference location: Athens, Greece

Conference date: October 14, 2009 - October 18, 2009

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