Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H

[1 ]Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

[2 ]Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1118, Japan

[3 ]Division of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

[4 ]Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

[5 ]Research Center for Integrated Quantum Electronics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan