Nitrogenated holey two-dimensional structures

Abstract

Recent graphene research has triggered enormous interest in new two-dimensional ordered crystals constructed by the inclusion of elements other than carbon for bandgap opening. The design of new multifunctional two-dimensional materials with proper bandgap has become an important challenge. Here we report a layered two-dimensional network structure that possesses evenly distributed holes and nitrogen atoms and a C ₂N stoichiometry in its basal plane. The two-dimensional structure can be efficiently synthesized via a simple wet-chemical reaction and confirmed with various characterization techniques, including scanning tunnelling microscopy. Furthermore, a field-effect transistor device fabricated using the material exhibits an on/off ratio of 10 ⁷, with calculated and experimental bandgaps of approximately 1.70 and 1.96 eV, respectively. In view of the simplicity of the production method and the advantages of the solution processability, the C ₂N- h2D crystal has potential for use in practical applications.

Abstract

There is currently interest in two-dimensional graphene-like materials incorporating heteroatoms. Here, the authors synthesize a solution-processable, holey two-dimensional network with C ₂N stoichiometry containing evenly distributed holes and nitrogen atoms, and use it to fabricate a field effect transistor.