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      Observation of ultra-large Rabi splitting in the plasmon-exciton polaritons at room temperature

      1 , 1 , 1 , 1 , 2 , 1 , 2 , 1 , 2 , 3 , 4
      Nanophotonics
      Walter de Gruyter GmbH

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          Abstract

          Modifying the light–matter interactions in the plasmonic structures and the two-dimensional (2D) materials not only advances the deeper understanding of the fundamental studies of many-body physics but also provides the opportunities for exploration of novel 2D plasmonic polaritonic devices. Here, we report the plasmon-exciton coupling in the hybrid system with a plasmonic metasurface which can confine the electric field in an extremely compact mode volume. Because of the 2D feature of the designed and fabricated Al plasmonic metasurface, the confined electronic field is distributed in the plane with the same orientation as that of the exciton dipole moment in the transition metal dichalcogenides monolayers. By finely tuning the geometric size of the plasmonic nanostructures, we can significantly modify the dispersion relation of the coupled plasmon and the exciton. Our system shows a strong coupling behavior with an achieved Rabi splitting up to ∼200 meV at room temperature, in ambient conditions. The effective tailoring of the plasmon-exciton coupling with the plasmonic metasurfaces provides the testing platform for studying the quantum electromagnetics at the subwavelength scale as well as exploring plasmonic polariton Bose–Einstein condensation at room temperature.

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          Electric Field Effect in Atomically Thin Carbon Films

          We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
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            • Record: found
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            Emerging photoluminescence in monolayer MoS2.

            Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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              Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

              The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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                Author and article information

                Contributors
                Journal
                Nanophotonics
                Walter de Gruyter GmbH
                2192-8614
                August 04 2023
                July 12 2023
                August 01 2023
                August 04 2023
                July 10 2023
                August 01 2023
                : 12
                : 16
                : 3267-3275
                Affiliations
                [1 ]State Key Laboratory of Precision Spectroscopy , East China Normal University , Shanghai , 200241 , China
                [2 ]Collaborative Innovation Center of Extreme Optics , Shanxi University , Taiyuan , Shanxi 030006 , China
                [3 ]Chongqing Key Laboratory of Precision Optics , Chongqing Institute of East China Normal University , Chongqing 401121 , China
                [4 ]CAS Center for Excellence in Ultra-intense Laser Science , Shanghai 201800 , China
                Article
                10.1515/nanoph-2023-0162
                c51cc3b6-c302-4ffd-a407-a1c4b3f4016c
                © 2023

                http://creativecommons.org/licenses/by/4.0

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