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Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
Alexander S. Mayorov ,
Roman V. Gorbachev ,
Sergey V. Morozov ,
Liam Britnell ,
Rashid Jalil ,
Leonid A. Ponomarenko ,
Peter Blake ,
Kostya S. Novoselov ,
Kenji Watanabe ,
Takashi Taniguchi ,
A. K. Geim
June 08 2011
June 08 2011
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Abstract
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced
negative bend resistance and an anomalous Hall effect, which are a direct consequence
of room-temperature ballistic transport at a micrometer scale for a wide range of
carrier concentrations. The encapsulation makes graphene practically insusceptible
to the ambient atmosphere and, simultaneously, allows the use of boron nitride as
an ultrathin top gate dielectric.