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      Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

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          The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

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            The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

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              AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                July 2006
                July 2006
                : 53
                : 7
                : 1517-1523
                Article
                10.1109/TED.2006.875819
                aa3cbef9-524a-4e02-84c9-7402e1d80542
                © 2006
                History

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