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      Thermal Dynamics Effects using Pulse-Shaping Laser Sintering of Printed Silver Inks

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          Abstract

          In recent years, additive manufacturing has been evolving towards flexible substrates for the fabrication of printable electronic devices and circuits. Generally polymer-based, these emerging substrates suffer from their heat sensitivity and low glass-transition temperatures. As such they require new highly-localized sintering processes to treat the electronic inks without damaging the polymer-based substrate. Laser-based sintering techniques have shown great promises to achieve high-quality sintering locally, while controlling the heat penetration to preserve the polymer substrates integrity. In this report, we explore new optimization pathways for dynamic laser-based sintering of conductive silver inks. Multiple passes of a pulsed laser are first performed while varying pulse train frequencies and pulse energies as an attempt to optimize the properties of the silver inks. Then, time-domain pulse shaping is performed to alter the properties of the conductive inks. Together, these pathways allow for the careful control of the time-domain laser energy distribution in order to achieve the best electronic performances while preserving the substrate’s integrity. Sheet resistance values as low as 0.024Ω/□ are achieved, which is comparable to conventional 1-hour oven annealing, with the processing time dramatically reduced to the milisecond range. These results are supported by finite element modeling of the laser-induced thermal dynamics.

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          PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors.

          Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically "activated" to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 10(3) to 10(4); and with current density approaching 3 x 10(4) amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.
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            All-inkjet-printed flexible electronics fabrication on a polymer substrate by low-temperature high-resolution selective laser sintering of metal nanoparticles

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              Nonvacuum, maskless fabrication of a flexible metal grid transparent conductor by low-temperature selective laser sintering of nanoparticle ink.

              We introduce a facile approach to fabricate a metallic grid transparent conductor on a flexible substrate using selective laser sintering of metal nanoparticle ink. The metallic grid transparent conductors with high transmittance (>85%) and low sheet resistance (30 Ω/sq) are readily produced on glass and polymer substrates at large scale without any vacuum or high-temperature environment. Being a maskless direct writing method, the shape and the parameters of the grid can be easily changed by CAD data. The resultant metallic grid also showed a superior stability in terms of adhesion and bending. This transparent conductor is further applied to the touch screen panel, and it is confirmed that the final device operates firmly under continuous mechanical stress.
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                Author and article information

                Contributors
                martin.bolduc@ino.ca
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                23 January 2018
                23 January 2018
                2018
                : 8
                : 1418
                Affiliations
                [1 ]ISNI 0000 0004 0610 736X, GRID grid.434784.8, Institut National d’Optique, ; 2740 Einstein Street, Québec, QC G1P 4S4 Canada
                [2 ]ISNI 0000 0001 2222 4302, GRID grid.459234.d, Department of Electrical Engineering, , École de Technologie Supérieure, ; 1100 Notre-Dame Ouest, Montréal, QC H3C 1K3 Canada
                Article
                19801
                10.1038/s41598-018-19801-4
                5780432
                29362423
                94b30e9b-a59b-430a-b632-0f7c7d12273a
                © The Author(s) 2018

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 1 November 2017
                : 3 January 2018
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