Recently, the quaternary Janus monolayers with the formula A
2B
2X
3Y
3 have been shown to be promising candidates for optoelectronic applications, especially
in the photocatalytic water splitting reaction. Therefore, first-principles calculations
were employed to investigate the photocatalytic properties of Ga
2Ge
2X
3Y
3 (X and Y represent S, Se or Te atoms) monolayers. The Ga
2Ge
2S
3Se
3 and Ga
2Ge
2Se
3Te
3 monolayers exhibit dynamic and thermal stability, supported by high cohesive energies
(3.78–4.20 eV) and positive phonon dispersion. With a moderate Young's modulus (50.02–65.31
N m
−1) and high Poisson's ratio (0.39–0.41), these monolayers offer a balance of stiffness
and flexibility, making them suitable for flexible electronic applications. Especially,
the difference in work function of 0.27 eV induces an intrinsic electric field in
the Ga
2Ge
2S
3Se
3 monolayer, making the electronic structure of this material be suitable for the photocatalytic
water splitting process. With light irradiation, the oxygen evolution reaction (OER)
happened simultaneously, producing electrons and H
+ protons for the hydrogen evolution reaction (HER) to happen at a low potential barrier.
Moreover, the Ga
2Ge
2S
3Se
3 monolayer has a high absorption rate
α(
ω) of 10
5–10
6 cm
−1 and a high electron mobility of 430.82–461.50 cm
2 V
−1 s
−1. These characteristics result in a good solar-to-hydrogen
of the Ga
2Ge
2S
3Se
3 monolayer (14.80%) which is promising for use in photon-driven water splitting.
The Ga 2Ge 2S 3Se 3 monolayer: a promising 2D photocatalyst with high solar-to-hydrogen efficiency, efficient charge separation, and electron mobility.
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