Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

Abstract

We report the growth of InAs\(_{1-x}\)Sb\(_{x}\) nanowires (\(0\leq x \leq 0.15\)) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs\(_{1-x}\)Sb\(_{x}\) nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs\(_{0.85}\)Sb\(_{0.15}\) nanowires than InAs nanowires.