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      Current‐Induced Helicity Reversal of a Single Skyrmionic Bubble Chain in a Nanostructured Frustrated Magnet

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          Abstract

          Helicity indicates the in‐plane magnetic‐moment swirling direction of a skyrmionic configuration. The ability to reverse the helicity of a skyrmionic bubble via purely electrical means has been predicted in frustrated magnetic systems; however, it has been challenging to observe this experimentally. The current‐driven helicity reversal of the skyrmionic bubble in a nanostructured frustrated Fe 3Sn 2 magnet is experimentally demonstrated. The critical current density required to trigger the helicity reversal is 10 9–10 10 A m −2, with a corresponding pulse‐width varying from 1 µs to 100 ns. Computational simulations reveal that both the pinning effect and dipole–dipole interaction play a crucial role in the helicity reversal process.

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            Skyrmions on the track.

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              The emergence of spin electronics in data storage.

              Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.
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                Author and article information

                Contributors
                Journal
                Advanced Materials
                Advanced Materials
                Wiley
                0935-9648
                1521-4095
                January 2020
                November 20 2019
                January 2020
                : 32
                : 1
                Affiliations
                [1 ] Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China
                [2 ] Institute for Advanced Materials Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China
                [3 ] Physical Science and Engineering Division King Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi Arabia
                [4 ] School of Science and Engineering The Chinese University of Hong Kong Shenzhen Guangdong 518172 China
                [5 ] School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China
                [6 ] Department of Applied Physics The University of Tokyo 7‐3‐1 Hongo Tokyo 113‐8656 Japan
                [7 ] Department of Electrical and Computer Engineering Shinshu University 4‐17‐1 Wakasato Nagano 380‐8553 Japan
                Article
                10.1002/adma.201904815
                58ca8bc7-2de7-4c91-be1e-bf34c6620c49
                © 2020

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