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      Tunable multiferroic and bistable/complementary resistive switching properties of dilutely Li-doped BiFeO3 nanoparticles: an effect of aliovalent substitution

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          Abstract

          Multiferroic and resistive switching properties of BiFeO 3 nanoparticles were improved by dilute aliovalent Li 1+ doping.

          Abstract

          We report a potential way to enhance and tune the multiferroic and resistive switching properties of BiFeO 3 nanoparticles through dilute aliovalent Li 1+ doping (0.046 atomic percent) at the Fe 3+ sites of BiFeO 3. The high purity of the samples and the extent of doping were confirmed by different physical characterizations. Enhanced multiferroic properties with a magnetic moment per Fe atom ≈ 0.12 μ B and electric polarization ≈ 49 μC cm −2 were observed in one of the Li 1+ doped samples. A phenomenological model has been proposed to support the observed magnetic behavior of the doped samples. From a potential application point of view, we further report on the doping concentration and polarization coercivity dependent highly stable resistive switching behavior (endurance cycles >10 3 and stability >10 6 s) of Li-doped BiFeO 3 nanoparticles. The stable complementary resistive switching behavior (1 bit operation) for >50 cycles and under voltage pulse for 10 3 cycles in the doped BiFeO 3 at a low operating bias is reported. Thus, dilute aliovalent Li 1+ doping enables tunability of the ferroic and resistive switching properties of BiFeO 3and shows it to be a promising multiferroic material.

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          Most cited references65

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          Epitaxial BiFeO3 multiferroic thin film heterostructures.

          Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
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            Resistive switching in transition metal oxides

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              Multiferroic magnetoelectric composites: Historical perspective, status, and future directions

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                Author and article information

                Journal
                NANOHL
                Nanoscale
                Nanoscale
                Royal Society of Chemistry (RSC)
                2040-3364
                2040-3372
                2014
                2014
                : 6
                : 9
                : 4735-4744
                Affiliations
                [1 ]Hefei National Laboratory for Physical Sciences at the Microscale
                [2 ]University of Science and Technology of China
                [3 ]Hefei, People's Republic of China
                Article
                10.1039/C3NR05973A
                24658840
                32161d60-bba1-4517-b178-d60178a00d3b
                © 2014
                History

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