Widely tunable, low phase noise microwave source based on a photonic chip

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Abstract

Spectrally pure microwave sources are highly desired for several applications, ranging from wireless communication to next generation radar technology and metrology. Additionally, to generate very pure signals at even higher frequencies, these advanced microwave sources have to be compact, low in weight, and low energy consumption to comply with in-field applications. A hybrid optical and electronic cavity, known as an optoelectronic oscillator (OEO), has the potential to leverage the high bandwidth of optics to generate ultrapure high-frequency microwave signals. Here we present a widely tunable, low phase noise microwave source based on a photonic chip. Using on-chip stimulated Brillouin scattering as a narrowband active filter allows single-mode OEO operation and ultrawide frequency tunability with no signal degeneration. Furthermore, we show very low close-to-carrier phase noise. This Letter paves the way to a compact, fully integrated pure microwave source.

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Silicon optical modulators

G. Reed, G Mashanovich, F. Y. Gardes … (2010)

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Ultrafast graphene photodetector

Yu-Ming Lin, Fengnian Xia, Thomas Mueller … (2009)

The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct interband transitions a considerable fraction of the light (~2.3%) over a very a broad wavelength range. However, while applications in electronics are vigorously being pursued, photonic applications have not attracted as much attention. Here, we report on ultrafast photocurrent response measurements in graphene (single and few-layers) field-effect-transistors (FETs) up to 40 GHz light intensity modulation frequencies, using a 1.55 micron excitation laser. No photoresponse degradation is observable up to the highest measured frequency, demonstrating the feasibility and unique benefits of using graphene in photonics. Further analysis suggests that the intrinsic bandwidth of such graphene FET based photodetectors may exceed 500 GHz. Most notably, the generation and transport of the photo-carriers in such graphene photodetectors are fundamentally different from those in currently known semiconductor photodetectors, leading to a remarkably high bandwidth, zero source-drain bias (hence zero dark current) operation, and good internal quantum efficiency.