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      Topological quantum phase transition from mirror to time reversal symmetry protected topological insulator

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          Abstract

          Topological insulators constitute a new phase of matter protected by symmetries. Time-reversal symmetry protects strong topological insulators of the Z 2 class, which possess an odd number of metallic surface states with dispersion of a Dirac cone. Topological crystalline insulators are merely protected by individual crystal symmetries and exist for an even number of Dirac cones. Here, we demonstrate that Bi-doping of Pb 1− x Sn x Se (111) epilayers induces a quantum phase transition from a topological crystalline insulator to a Z 2 topological insulator. This occurs because Bi-doping lifts the fourfold valley degeneracy and induces a gap at \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\bar \Gamma $$\end{document} , while the three Dirac cones at the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\bar{\rm M}}$$\end{document} points of the surface Brillouin zone remain intact. We interpret this new phase transition as caused by a lattice distortion. Our findings extend the topological phase diagram enormously and make strong topological insulators switchable by distortions or electric fields.

          Abstract

          Transitions between topological phases of matter protected by different symmetries remain rare. Here, Mandal et al. report a quantum phase transition from a topological crystalline insulator to a Z 2 topological insulator by doping Bi into Pb 1- x Sn x Se (111) thin films.

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          Topological Insulators

          , (2011)
          Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A 3D topological insulator supports novel spin polarized 2D Dirac fermions on its surface. In this Colloquium article we will review the theoretical foundation for these electronic states and describe recent experiments in which their signatures have been observed. We will describe transport experiments on HgCdTe quantum wells that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. We will then discuss experiments on Bi_{1-x}Sb_x, Bi_2 Se_3, Bi_2 Te_3 and Sb_2 Te_3 that establish these materials as 3D topological insulators and directly probe the topology of their surface states. We will then describe exotic states that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions, and may provide a new venue for realizing proposals for topological quantum computation. We will close by discussing prospects for observing these exotic states, a well as other potential device applications of topological insulators.
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            Topological insulators and superconductors

            Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi\(_2\)Te\(_3\) and Bi\(_2\)Se\(_3\) crystals. We review theoretical models, materials properties and experimental results on two-dimensional and three-dimensional topological insulators, and discuss both the topological band theory and the topological field theory. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. We review the theory of topological superconductors in close analogy to the theory of topological insulators.
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              Topological Insulators in Three Dimensions

              (2007)
              We study three dimensional generalizations of the quantum spin Hall (QSH) effect. Unlike two dimensions, where the QSH effect is distinguished by a single \(Z_2\) topological invariant, in three dimensions there are 4 invariants distinguishing 16 "topological insulator" phases. There are two general classes: weak (WTI) and strong (STI) topological insulators. The WTI states are equivalent to layered 2D QSH states, but are fragile because disorder continuously connects them to band insulators. The STI states are robust and have surface states that realize the 2+1 dimensional parity anomaly without fermion doubling, giving rise to a novel "topological metal" surface phase. We introduce a tight binding model which realizes both the WTI and STI phases, and we discuss the relevance of this model to real three dimensional materials, including bismuth.
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                Author and article information

                Contributors
                jaime.sanchez-barriga@helmholtz-berlin.de
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                17 October 2017
                17 October 2017
                2017
                : 8
                : 968
                Affiliations
                [1 ]ISNI 0000 0001 1090 3682, GRID grid.424048.e, Helmholtz-Zentrum Berlin für Materialien und Energie, ; Albert-Einstein Strasse 15, 12489 Berlin, Germany
                [2 ]ISNI 0000 0001 0942 1117, GRID grid.11348.3f, Institut für Physik und Astronomie, , Universität Potsdam, ; Karl-Liebknecht Street 24/25, 14476 Potsdam, Germany
                [3 ]ISNI 0000 0001 1941 5140, GRID grid.9970.7, Institute for Semiconductor and Solid State Physics, , Johannes Kepler Universität, ; Altenberger Strasse 69, 4040 Linz, Austria
                [4 ]ISNI 0000 0004 0399 6958, GRID grid.18192.33, National Technical University “Kharkiv Polytechnic Institute”, ; Frunze Street 21, 61002 Kharkiv, Ukraine
                [5 ]ISNI 0000 0001 2194 0956, GRID grid.10267.32, Department of Condensed Matter Physics, , Masaryk University, ; Kotlářská 267/2, 61137 Brno, Czech Republic
                Author information
                http://orcid.org/0000-0003-1483-1959
                http://orcid.org/0000-0003-3639-0971
                http://orcid.org/0000-0001-9947-6700
                Article
                1204
                10.1038/s41467-017-01204-0
                5645419
                29042565
                2abcf1bd-664f-4f26-9794-0f157059b6bb
                © The Author(s) 2017

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 16 December 2016
                : 24 August 2017
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