Among the perovskite oxide family, KTaO 3 (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we report a novel conducting interface by placing KTO with another insulator, LaVO 3 (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observations of two fold AMR and PHE at low magnetic fields ( B) is similar to those obtained for topological systems and can be intuitively understood using a phenomenological theory for a Rashba spin-split system. Our experimental data show a B 2 dependence of AMR and PHE at low magnetic fields that could also be explained based on our model. At high fields (~8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra.
Two dimensional electron gas (2DEG) at oxide interfaces is promising in modern electronic devices. Here, Wadehra et al. realize 2DEG at a novel interface composed of LaVO 3 and KTaO 3, where strong spin-orbit coupling and relativistic nature of the electrons in the 2DEG, leading to anisotropic magnetoresistance and planar Hall effect.