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Abstract
<p xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" class="first" dir="auto"
id="d2195310e77">Antiferroelectric (AFE) materials have attracted a great deal of
attention owing to
their high energy conversion efficiency and good tunability. Recently, an exotic two-dimensional
AFE material, a β'-In2Se3 monolayer that could host atomically thin AFE nanostripe
domains, has been experimentally synthesized and theoretically examined. In this work,
we apply first-principles calculations and theoretical estimations to predict that
light irradiation can control the nanostripe width of such a system. We suggest that
an intermediate near-infrared light (below the bandgap) could effectively harness
the thermodynamic Gibbs free energy and thermodynamic stability, and the AFE nanostripe
width will gradually decrease. We also propose to use linearly polarized light above
the bandgap to generate an AFE nanostripe-specific photocurrent, providing an all-optical
pump-probe setup for such AFE nanostripe width phase transitions.
</p>