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      2D Materials for Gas Sensing Applications: A Review on Graphene Oxide, MoS 2, WS 2 and Phosphorene

      review-article
      1 , 2 , * , 2 , 3
      Sensors (Basel, Switzerland)
      MDPI
      graphene oxide, MoS2, WS2, phosphorene, gas sensors

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          Abstract

          After the synthesis of graphene, in the first year of this century, a wide research field on two-dimensional materials opens. 2D materials are characterized by an intrinsic high surface to volume ratio, due to their heights of few atoms, and, differently from graphene, which is a semimetal with zero or near zero bandgap, they usually have a semiconductive nature. These two characteristics make them promising candidate for a new generation of gas sensing devices. Graphene oxide, being an intermediate product of graphene fabrication, has been the first graphene-like material studied and used to detect target gases, followed by MoS 2, in the first years of 2010s. Along with MoS 2, which is now experiencing a new birth, after its use as a lubricant, other sulfides and selenides (like WS 2, WSe 2, MoSe 2, etc.) have been used for the fabrication of nanoelectronic devices and for gas sensing applications. All these materials show a bandgap, tunable with the number of layers. On the other hand, 2D materials constituted by one atomic species have been synthetized, like phosphorene (one layer of black phosphorous), germanene (one atom thick layer of germanium) and silicone (one atom thick layer of silicon). In this paper, a comprehensive review of 2D materials-based gas sensor is reported, mainly focused on the recent developments of graphene oxide, exfoliated MoS 2 and WS 2 and phosphorene, for gas detection applications. We will report on their use as sensitive materials for conductometric, capacitive and optical gas sensors, the state of the art and future perspectives.

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          Most cited references195

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Emerging photoluminescence in monolayer MoS2.

            Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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              Atomically thin MoS2: A new direct-gap semiconductor

              The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.
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                Author and article information

                Journal
                Sensors (Basel)
                Sensors (Basel)
                sensors
                Sensors (Basel, Switzerland)
                MDPI
                1424-8220
                26 October 2018
                November 2018
                : 18
                : 11
                : 3638
                Affiliations
                [1 ]Sensor Laboratory, Department of Information Engineering, University of Brescia, Via Branze 38, 25136 Brescia, Italy
                [2 ]Department of Physical and Chemical Sciences, University of L’Aquila, Via Vetoio 10, 67100 L’Aquila, Italy; luca.ottaviano@ 123456aquila.infn.it
                [3 ]CNR-SPIN, UOS L’Aquila, Via Vetoio 10, 67100 L’Aquila, Italy
                Author notes
                Author information
                https://orcid.org/0000-0002-0374-9610
                Article
                sensors-18-03638
                10.3390/s18113638
                6264021
                30373161
                1a5d24aa-1e43-45f4-9494-58e4b037e19d
                © 2018 by the authors.

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                : 27 August 2018
                : 18 October 2018
                Categories
                Review

                Biomedical engineering
                graphene oxide,mos2,ws2,phosphorene,gas sensors
                Biomedical engineering
                graphene oxide, mos2, ws2, phosphorene, gas sensors

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