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      • Record: found
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      AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADEDp‐nJUNCTIONS IN Ge, Si, GaAs, AND GaP

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Ionization Rates of Holes and Electrons in Silicon

          R. Batdorf, W. Wiegmann, C Lee … (1964)
          Article 0 comments Cited 139 times – based on 0 reviews     Review now
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            Avalanche Breakdown in Germanium

            S Miller (1955)
            Article 0 comments Cited 83 times – based on 0 reviews     Review now
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              Breakdown voltages of germanium plane-cylindrical junctions

              G Gibbons, J. Kocsis (1965)
              Article 0 comments Cited 2 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: March 1966
                Publication date (Print): March 1966
                Volume: 8
                Issue: 5
                Pages: 111-113
                Article
                DOI: 10.1063/1.1754511
                SO-VID: 0dec482c-dede-42b6-8c94-f9ce7ee20811
                Copyright © © 1966
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