IIIB-4 shallow junction formation for CMOS VLSI application using Tin preamorphization

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Journal

Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0018-9383

Publication date Created: November 1986

Publication date (Print): November 1986

Volume: 33

Issue: 11

Page: 1848

Article

DOI: 10.1109/T-ED.1986.22786

SO-VID: 0dd27f24-0fc0-49a3-863a-71a8e791f140

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