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      Solution-processed ferroelectric terpolymer nanocomposites with high breakdown strength and energy density utilizing boron nitride nanosheets

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          Abstract

          Ferroelectric polymer nanocomposites with boron nitride nanosheets exhibit greatly improved energy densities and higher charge–discharge efficiencies.

          Abstract

          The development of high-performance capacitive energy storage devices is of critical importance to address an ever-increasing electricity need. The energy density of a film capacitor is determined by the dielectric constant and breakdown strength of dielectric materials. With the highest dielectric constant among the known polymers, poly(vinylidene fluoride)-based ferroelectric terpolymers are of great potential for high energy density capacitors. However, their energy storage capability has long been limited by the relatively low breakdown strength. Here we demonstrate remarkable improvements in the energy density and charge–discharge efficiency of the ferroelectric terpolymers upon the incorporation of ultra-thin boron nitride nanosheets (BNNSs). It is found that BNNSs function as a robust scaffold to hamper the onset of electromechanical failure and simultaneously as an efficient insulating barrier against electrical conduction in the resulting polymer nanocomposites, resulting in greatly enhanced breakdown strength. Of particular note is the improved thermal conductivity of the terpolymer with the introduction of BNNSs; this is anticipated to benefit the stability and lifetime of polymer capacitors. This work establishes a facile, yet efficient approach to solution-processable dielectric materials with performance comparable or even superior to those achieved in the traditionally melt-extruded ultra-thin films.

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          Most cited references37

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          Laser scribing of high-performance and flexible graphene-based electrochemical capacitors.

          Although electrochemical capacitors (ECs), also known as supercapacitors or ultracapacitors, charge and discharge faster than batteries, they are still limited by low energy densities and slow rate capabilities. We used a standard LightScribe DVD optical drive to do the direct laser reduction of graphite oxide films to graphene. The produced films are mechanically robust, show high electrical conductivity (1738 siemens per meter) and specific surface area (1520 square meters per gram), and can thus be used directly as EC electrodes without the need for binders or current collectors, as is the case for conventional ECs. Devices made with these electrodes exhibit ultrahigh energy density values in different electrolytes while maintaining the high power density and excellent cycle stability of ECs. Moreover, these ECs maintain excellent electrochemical attributes under high mechanical stress and thus hold promise for high-power, flexible electronics.
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            Boron nitride substrates for high-quality graphene electronics

            Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.
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              Boron nitride nanotubes and nanosheets.

              Hexagonal boron nitride (h-BN) is a layered material with a graphite-like structure in which planar networks of BN hexagons are regularly stacked. As the structural analogue of a carbon nanotube (CNT), a BN nanotube (BNNT) was first predicted in 1994; since then, it has become one of the most intriguing non-carbon nanotubes. Compared with metallic or semiconducting CNTs, a BNNT is an electrical insulator with a band gap of ca. 5 eV, basically independent of tube geometry. In addition, BNNTs possess a high chemical stability, excellent mechanical properties, and high thermal conductivity. The same advantages are likely applicable to a graphene analogue-a monatomic layer of a hexagonal BN. Such unique properties make BN nanotubes and nanosheets a promising nanomaterial in a variety of potential fields such as optoelectronic nanodevices, functional composites, hydrogen accumulators, electrically insulating substrates perfectly matching the CNT, and graphene lattices. This review gives an introduction to the rich BN nanotube/nanosheet field, including the latest achievements in the synthesis, structural analyses, and property evaluations, and presents the purpose and significance of this direction in the light of the general nanotube/nanosheet developments.
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                Author and article information

                Journal
                EESNBY
                Energy & Environmental Science
                Energy Environ. Sci.
                Royal Society of Chemistry (RSC)
                1754-5692
                1754-5706
                2015
                2015
                : 8
                : 3
                : 922-931
                Article
                10.1039/C4EE02962C
                0d8c2298-e90c-4929-81dc-06c87d7c71a5
                © 2015
                History

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