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      Investigation of Structural, Mechanical, Optoelectronic, and Thermoelectric Properties of BaXF3 (X = Co, Ir) Fluoro-Perovskites: Promising Materials for Optoelectronic and Thermoelectric Applications.

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          Abstract

          Coded within Wien2K, we carry out DFT-based calculations for investigations of the structural, elastic, optoelectronic, and thermoelectric properties of BaXF3 (X = Co, Ir) fluoro-perovskites. The Birch-Murnaghan fit to the energy-vs-volume data and formation energy shows that these fluoro-perovskites are structurally stable. The phonon calculation confirms the thermodynamic stability, while the relation between elastic constants such as C 11 - C 12 > 0, C 11 > 0, C 11 + 2C 12 > 0, and B > 0 validates the mechanical stability of the compounds. BaIrF3 exhibits a strong ability to endure compressive and shear stresses. BaCoF3 shows a weaker capacity of withstanding changes in volume, attributed to a lower bulk modulus. Demonstrating a higher G-modulus of rigidity than the BaIrF3, BaCoF3 demonstrates stronger resistance to change the shape and both compounds are found to be anisotropic and brittle. The determined band structure profiles reveal that both BaCoF3 and BaIrF3 demonstrate a metallic nature. In addition, the metallic nature of BaCoF3 and BaIrF3 is reinforced by the density-of-states (DOS) study, where Co and F atoms contribute significantly to the total DOS in the valence band in the case of BaCoF3, while that of BaIrF3 is predominated by the Ba and F atoms. The computed values of ε1(0) for BaCoF3 and BaIrF3 are approximately 30 and 19, respectively, which are in line with Penn's model. The researched materials are confirmed to be strong contenders for optoelectronics by the lack of absorption in the visible range. For their potential use in thermoelectric device applications, thermoelectric parameters such as temperature-dependent Seebeck coefficient, specific heat capacity, thermal conductivity, power factor, and figure of merit are also investigated, which show that these materials are thermally stable and promising for applications in thermoelectric devices.

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          Most cited references47

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          Soft self-consistent pseudopotentials in a generalized eigenvalue formalism

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            Self-Consistent Equations Including Exchange and Correlation Effects

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              Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

              A modified version of the exchange potential proposed by Becke and Johnson [J. Chem. Phys. 124, 221101 (2006)10.1063/1.2213970] is tested on solids for the calculation of band gaps. The agreement with experiment is very good for all types of solids we considered (e.g., wide band gap insulators, sp semiconductors, and strongly correlated 3d transition-metal oxides) and is of the same order as the agreement obtained with the hybrid functionals or the GW methods. This semilocal exchange potential, which recovers the local-density approximation (LDA) for a constant electron density, mimics very well the behavior of orbital-dependent potentials and leads to calculations which are barely more expensive than LDA calculations. Therefore, it can be applied to very large systems in an efficient way.
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                Author and article information

                Journal
                ACS Omega
                ACS omega
                American Chemical Society (ACS)
                2470-1343
                2470-1343
                Feb 14 2023
                : 8
                : 6
                Affiliations
                [1 ] Department of Physics, Abdul Wali Khan University, 23200Mardan, Pakistan.
                [2 ] Department of Basic Medical Sciences, College of Applied Medical Sciences, King Khalid University, Abha61421, Kingdom of Saudi Arabia.
                [3 ] Department of Chemistry, Fatima Jinnah Women University, The Mall, 46000Rawalpindi, Pakistan.
                [4 ] Department of Physics, University of Lakki Marwat, 28420Lakki Marwat, Pakistan.
                [5 ] Mechanical Engineering Department, College of Engineering, King Khalid University, Abha61421, Kingdom of Saudi Arabia.
                [6 ] Research Center for Advanced Materials Science (RCAMS), King Khalid University, Guraiger, P.O. Box No. 9004, Abha61413, Asir, Kingdom of Saudi Arabia.
                Article
                10.1021/acsomega.2c05845
                9933232
                36816671
                02300823-975b-4791-9821-ff6cd78c389e
                History

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