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          Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications

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            Negative Resistance Arising from Transit Time in Semiconductor Diodes

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              A new device using the tunneling process in narrow p-n junctions

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                10.1007/978-3-540-34015-7_15
                38a396f1-28a3-4154-9b48-2846f7b220f1
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