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Fermi-Statistik der Kristallelektronen
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Author(s):
Eberhard Spenke
Publication date
(Print):
1965
Publisher:
Springer Berlin Heidelberg
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Kindheit, Jugend und Entwicklung
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The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
W. Shockley
(1949)
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New Phenomenon in Narrow Germaniump−nJunctions
Leo Esaki
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Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson
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J. Bardeen
(1949)
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Book Chapter
Publication date (Print):
1965
Pages
: 391-458
DOI:
10.1007/978-3-642-48244-1_8
SO-VID:
7fb7ed24-cc3d-41f6-b4e8-4683cdec4ff3
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Book chapters
pp. 1
Der Leitungsmechanismus in elektronischen Halbleitern
pp. 31
Störstellen und Versetzungen
pp. 94
Das Defektelektron
pp. 111
Die Wirkungsweise von Kristallgleichrichtern
pp. 184
Die physikalische Wirkungsweise von Kristallverstärkern (Transistoren)
pp. 236
Näherungsmethoden in der Quantenmechanik des Wasserstoffmoleküls
pp. 247
Das Bändermodell
pp. 391
Fermi-Statistik der Kristallelektronen
pp. 459
Rekombinationsmechanismen in elektronischen Halbleitern
pp. 501
Randschichten in Halbleitern und der Kontakt Halbleiter-Metall
pp. 548
Der einfachste Fall einer quantenmechanischen Theorie der Beweglichkeit
pp. 588
Mathematischer Anhang
pp. 653
Erratum to: Störstellen und Versetzungen
pp. 653
Erratum
pp. 653
Erratum to: Randschichten in Halbleitern und der Kontakt Halbleiter-Metall
pp. 653
Erratum to: Fermi-Statistik der Kristallelektronen
pp. 653
Erratum to: Rekombinationsmechanismen in elektronischen Halbleitern
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