16
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Berry phase theory of planar Hall effect in topological insulators

      research-article
      1 , , 1 , 2 , 3 , 1 , 4
      Scientific Reports
      Nature Publishing Group UK

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          The appearance of negative longitudinal magnetoresistance (LMR) in topological semimetals such as Weyl and Dirac semimetals is understood as an effect of chiral anomaly, whereas such an anomaly is not well-defined in topological insulators. Nevertheless, it has been shown recently in both theory and experiments that nontrivial Berry phase effects can give rise to negative LMR in topological insulators even in the absence of chiral anomaly. In this paper, we present a quasi-classical theory of another intriguing phenomenon in topological insulators – also ascribed to chiral anomaly in Weyl and Dirac semimetals– the so-called planar Hall effect (PHE). PHE implies the appearance of a transverse voltage in the plane of applied non-parallel electric and magnetic fields, in a configuration in which the conventional Hall effect vanishes. Starting from Boltzmann transport equations we derive the expressions for PHE and LMR in topological insulators in the bulk conduction limit, and show the important role played by orbital magnetic moment. Our theoretical results for magnetoconductance with non-parallel electric and magnetic fields predict detailed experimental signatures in topological insulators – specifically of planar Hall effect – that can be observed in experiments.

          Related collections

          Most cited references54

          • Record: found
          • Abstract: found
          • Article: found
          Is Open Access

          Topological Insulators

          , (2011)
          Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A 3D topological insulator supports novel spin polarized 2D Dirac fermions on its surface. In this Colloquium article we will review the theoretical foundation for these electronic states and describe recent experiments in which their signatures have been observed. We will describe transport experiments on HgCdTe quantum wells that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. We will then discuss experiments on Bi_{1-x}Sb_x, Bi_2 Se_3, Bi_2 Te_3 and Sb_2 Te_3 that establish these materials as 3D topological insulators and directly probe the topology of their surface states. We will then describe exotic states that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions, and may provide a new venue for realizing proposals for topological quantum computation. We will close by discussing prospects for observing these exotic states, a well as other potential device applications of topological insulators.
            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

              Bookmark
              • Record: found
              • Abstract: found
              • Article: found
              Is Open Access

              Topological insulators and superconductors

              Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi\(_2\)Te\(_3\) and Bi\(_2\)Se\(_3\) crystals. We review theoretical models, materials properties and experimental results on two-dimensional and three-dimensional topological insulators, and discuss both the topological band theory and the topological field theory. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. We review the theory of topological superconductors in close analogy to the theory of topological insulators.
                Bookmark

                Author and article information

                Contributors
                snehasish@phy.iitkgp.ernet.in
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                8 October 2018
                8 October 2018
                2018
                : 8
                : 14983
                Affiliations
                [1 ]ISNI 0000 0001 0153 2859, GRID grid.429017.9, Department of Physics, , Indian Institute of Technology Kharagpur, ; Kharagpur, 721302 India
                [2 ]ISNI 0000 0001 0153 2859, GRID grid.429017.9, Centre for Theoretical Studies and Centre for Nanoscience and Nanotechnology, , Indian Institute of Technology Kharagpur, ; Kharagpur, 721302 India
                [3 ]ISNI 0000 0004 1775 7851, GRID grid.462387.c, School of Basic Sciences, , Indian Institute of Technology Mandi, ; Kamand, 175005 India
                [4 ]ISNI 0000 0001 0665 0280, GRID grid.26090.3d, Department of Physics and Astronomy, , Clemson University, ; Clemson, SC 29634 USA
                Article
                33258
                10.1038/s41598-018-33258-5
                6175890
                30297854
                b525ceec-f7c6-4270-bdaa-178515870cd2
                © The Author(s) 2018

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 25 June 2018
                : 26 September 2018
                Categories
                Article
                Custom metadata
                © The Author(s) 2018

                Uncategorized
                Uncategorized

                Comments

                Comment on this article